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1-Adamantanecarboxylic Acid CAS NO.42711-75-1

1-Adamantanecarboxylic Acid CAS NO.42711-75-1

Introduction A photoresist is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronic industry.The process begins by coating a substrate with a light-sensitive organic...

Product   name:

1-Adamantanecarboxylic   acid

CAS  NO.:

42711-75-1

Structure:

42711-75-1.gif

Synonyms:

3-HYDROXYADAMANTANCARBOXYLIC   ACID;3-HYDROXYADAMANTANE-1-CARBOXYLIC ACID;3-HYDROXYADAMANTANECARBOXYLIC   ACID;AKOS BC-0508;1-HYDROXYADAMANTANE-3-CARBOXYLIC ACID;TIMTEC-BB SBB010113;3-Hydroxy-1-Adamantanecarboxylic   Acid;3-Hydroxy--1-Amantane Carboxylic Acid

MF:

C11H16O3

MW:

196.24

Melting   point :

203   °C

Chemical   Properties:

White to  yellow solid

Purity

98%

Capacity:

500KG /month

Package

In  paper drums /Fluoride drums /iron drums /plastic drums/IBC Tank ,etc.

Shipment   method :

By  Sea ,Air ,Courier door to door ,etc.

Storeage:

Under  room temperature ,keep away from direct sun light

Loading Port :

China  any port ,Beijing ,Shanghai ,Hongkong

Transportation   condition:

Shipped  as non- dangerous chemicals

Application:

Analog  Semiconductors, Light-Emitting Diodes LEDs, Solar Photovoltaics PV

 

Introduction


A photoresist is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronic industry.The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface.

 

In the case of a positive photoresist, the photo-sensitive material is degraded by light and the developer will dissolve away the regions that were exposed to light, leaving behind a coating where the mask was placed.

 

In the case of a negative photoresist, the photosensitive material is strengthened (either polymerized or cross-linked) by light, and the developer will dissolve away only the regions that were not exposed to light, leaving behind a coating in areas where the mask was not placed.

 

Based on the chemical structure of photoresists, they can be classified into three types: Photopolymeric, photodecomposing, photocrosslinking photoresist.

 

Photopolymeric photoresist is a type of photoresist, usually allyl monomer, which could generate free radical when exposed to light, then initiates the photopolymerization of monomer to produce a polymer. Photopolymeric photoresists are usually used for negative photoresist, e.g. methyl methacrylate.

 

Photopolymerization of methyl methacrylate monomers under UV that resulting into polymer

Photodecomposing photoresist is a type of photoresist that generates hydrophilic products under light. Photodecomposing photoresists are usually used for positive photoresist.

 

Photolysis of a dizaonaphthoquinone that leads to a much more polar environment, which allows aqueous base to dissolve a Bakelite-type polymer.

Photocrosslinking photoresist is a type of photoresist, which could crosslink chain by chain when exposed to light, to generate an insoluble network. Photocrosslinking photoresist are usually used for negative photoresist.

 

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